NTZD3152P datasheet(4/5 Pages) ONSEMI

номер детали	NTZD3152P

подробное описание детали	Small Signal MOSFET

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NTZD3152P

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

VGS = 0 V

−VGS

510

150

100

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

QG, TOTAL GATE CHARGE (nC)

TJ = 25°C

COSS

CISS

CRSS

ID = −0.215 A

TJ = 25°C

250

1.8

1.6

QGD

100

RG, GATE RESISTANCE (W)

VDD = −10 V

ID = −0.215 A

VGS = −4.5 V

100

200

td(off)

td(on)

−VDS

1.4

0.2

1.2

0.9

0.2

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

VGS = 0 V

TJ = 25°C

0.6

0.7

0.5

0.3

0.4

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

0.4

0.6

0.8

0.6

0.4

QGS

Figure 11. Safe Operating Area

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

100

0.1

0.001

0.1

RDS(on) Limit

Thermal Limit

Package Limit

100 ms

10 ms

VGS ≤ 6 V

Single Pulse

TC = 25°C

0.01

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