MMBF2201N datasheet(2/4 Pages) ONSEMI

2 / 4 page

MMBF2201N, NVF2201N

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 mA)

V(BR)DSS

−

Vdc

Zero Gate Voltage Drain Current

(VDS = 16 Vdc, VGS = 0 Vdc)

(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

1.0

mAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

−

±100

nAdc

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

(VDS = VGS, ID = 250 mAdc)

VGS(th)

1.0

1.7

2.4

Vdc

Static Drain−to−Source On−Resistance

(VGS = 10 Vdc, ID = 300 mAdc)

(VGS = 4.5 Vdc, ID = 100 mAdc)

rDS(on)

−

0.75

1.0

1.4

Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)

gFS

−

450

−

mMhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 5.0 V)

Ciss

−

Output Capacitance

(VDS = 5.0 V)

Coss

−

Transfer Capacitance

(VDG = 5.0 V)

Crss

−

5.0

−

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

(VDD = 15 Vdc, ID = 300 mAdc,

RL = 50 W)

td(on)

−

2.5

−

Rise Time

−

2.5

−

Turn−Off Delay Time

td(off)

−

Fall Time

−

0.8

−

Gate Charge (See Figure 5)

−

1400

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Continuous Current

−

0.3

Pulsed Current

ISM

−

0.75

Forward Voltage (Note 3)

VSD

−

0.85

−

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

TYPICAL CHARACTERISTICS

Figure 1. Typical Drain Characteristics

VDS, DRAIN-SOURCE VOLTAGE (VOLTS)

Figure 2. On Resistance versus Temperature

TEMPERATURE (

°C)

0.5

0.6

0.7

0.8

0.9

1.0

0.6

0.8

1.0

1.2

1.4

1.6

-60

0.1

0.2

0.3

0.4

0.2

-40 -20

100

120

140

160

VGS = 4 V

VGS = 3.5 V

VGS = 2.5 V

VGS = 3 V

VGS = 4.5 V

VGS = 10 V

ID = 100 mA

ID = 300 mA

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