RN2001

~RN2006

2001-06-07

1

Type No.

R1 (kΩ)

R2 (kΩ)

RN2001

4.7

4.7

RN2002

10

10

RN2003

22

22

RN2004

47

47

RN2005

2.2

47

RN2006

4.7

47

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2001,RN2002,RN2003

RN2004,RN2005,RN2006

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1001~RN1006

Equivalent Circuit and Bias Resister Values

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

RN2001~2006

−50

V

RN2001~2004

−10

Emitter-base voltage

RN2005, 2006

−5

V

Collector current

−100

mA

Collector power dissipation

400

mW

Junction temperature

150

°C

Storage temperature range

RN2001~2006

−55~150



°C

JEDEC

TO-92

EIAJ

SC-43

TOSHIBA

2-5F1B

Weight: 0.21g

Unit: mm