PUMB9 datasheet(4/8 Pages) PHILIPS

номер детали	PUMB9

подробное описание детали	PNP/PNP resistor-equipped transistors; R1 = 10 kW, R2 = 47 kW

PDF	8 Pages

Scroll/Zoom	100%

производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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4 / 8 page

2003 Oct 03

Philips Semiconductors

Product speciﬁcation

PNP/PNP resistor-equipped transistors;

R1 = 10 k

Ω, R2 = 47 kΩ

PEMB9; PUMB9

THERMAL CHARACTERISTICS

Notes

1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.

2. Reflow soldering is the only recommended soldering method.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Per transistor

Rth j-a

thermal resistance from junction to ambient

Tamb ≤ 25 °C

SOT363

note 1

625

K/W

SOT666

notes 1 and 2

625

K/W

Per device

Rth j-a

thermal resistance from junction to ambient

Tamb ≤ 25 °C

SOT363

note 1

416

K/W

SOT666

note 1

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = −50 V; IE =0

−−−100

ICEO

collector-emitter cut-off current

VCE = −30 V; IB =0

−−−1

µA

VCE = −30 V; IB = 0; Tj = 150 °C

−−−50

µA

IEBO

emitter-base cut-off current

VEB = −5 V; IC =0

−−−150

µA

hFE

DC current gain

VCE = −5 V; IC = −5 mA

100

−−

VCEsat

saturation voltage

IC = −5 mA; IB = −0.25 mA

−−−100

Vi(off)

input-off voltage

VCE = −5 V; IC = −100 µA

−−0.7

−0.5

Vi(on)

input-on voltage

VCE = −0.3 V; IC = −1mA

−1.4

−0.8

−

input resistor

Ω

resistor ratio

3.7

4.7

5.7

collector capacitance

IE =ie = 0; VCB = −10 V;

f = 1 MHz

−−

3pF

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