NE57607 datasheet(4/10 Pages) PHILIPS

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Philips Semiconductors

Product data

NE57607

Two-cell Lithium-ion battery protection with

overcurrent, over- and under-voltage protection

2001 Oct 03

MAXIMUM RATINGS

SYMBOL

PARAMETER

Min.

Max.

UNIT

VIN(max)

Input voltage

–0.3

+18

VCF(max)

Maximum CF pin voltage

–

VIN–0.6

VCS(max)

Maximum CS pin voltage

–

VIN–0.6

Topr

Operating ambient temperature range

–20

+70

°C

Tstg

Storage temperature

–40

+125

°C

Power dissipation

–

300

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C; VCEL = V4–V3 = V3–V2 = V2–V1 = V1–GND; VCC = 4VCEL, except where noted otherwise.

SYMBOL

PARAMETER

CONDITIONS

Min.

Typ.

Max.

UNIT

VOC

Overcharge detection voltage

Tamb = 0 °C ∼ 50 °C

4.325

4.350

4.375

VOC

Overcharge detection hysteresis

voltage

170

220

270

VOD

Overdischarge detection voltage

2.20

2.30

2.40

IVC2(1)

Consumption current 1

VC2 = VC1 = 1.0 V; VCS = 1.4 V

–

0.1

µA

IVC2(2)

Consumption current 2

VC2 = VC1 = 1.9 V; VCS = 3.2 V

–

0.5

0.8

µA

IVC23

Consumption current 3

VC2 = VC1 = 3.5 V

–

15.0

20.0

µA

IVC24

Consumption current 4

VC2 = VC1 = 4.5 V; ROC = 270 kΩ

–

150

µA

IVC1

VC1 pin input current

VC2 = VC1 = 3.5 V

–0.3

0.3

µA

VDF

Overdischarge release voltage

Discharge resume by voltage rise

3.30

3.50

3.70

VGDH

GD pin HIGH output voltage

VC2 = VC1 = 3.5 V; IL = –10 µA

VC2–0.3

VC2–0.2

–

VGDL

GD pin LOW output voltage

VC2 = VC1 = 3.5 V; IL = 10 µA

–

0.2

0.3

ICFH

CF pin output current

VC2 = VC1 = 4.5 V

–

150

µA

VCS1

Overcurrent detection threshold value

135

150

165

VCS2

Short circuit threshold value

When both battery pack pins are shorted

0.35

0.45

0.55

Overcurrent release

Load release: Load of 5MEG

& or more between both battery pack pins

tOC1

Overcurrent detection delay time 1

tOC2

Overcurrent detection delay time 2

Note 1

–

100

µs

tOD

Overdischarge detection delay time

tOCH

Overcharge detection dead time

CDLY = 0.18 µF; Note 2

0.5

1.0

1.5

VST

Start-up voltage

VC2 = VC1 = 2.5 V

–0.24

–0.12

–0.04

NOTES:

1. The short-circuit delay time is for the IC only. This time will increase with the discharge FET gate capacitance. The short-circuit condition

may cause the cell voltage to collapse and lengthen the delay.

2. Calculate overcharge dead time according to the following formula:

Talm – 5.55 × CTD

(time expressed in seconds, capacitance in

µF)

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