MSB92ASWT1G datasheet(2/5 Pages) ONSEMI

номер детали	MSB92ASWT1G

подробное описание детали	PNP Silicon General Purpose High Voltage Transistor

PDF	5 Pages

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производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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MSB92ASWT1G, MSB92AS1WT1G

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ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage

(IC = −1.0 mAdc, IB = 0)

V(BR)CEO

−300

−

Vdc

Collector-Base Breakdown Voltage

(IC = −100 mAdc, IE = 0)

V(BR)CBO

−300

−

Vdc

Emitter-Base Breakdown Voltage

(IE = −100 mAdc, IE = 0)

V(BR)EBO

−5.0

−

Vdc

Collector-Base Cutoff Current

(VCB = 300 Vdc, IE = 0)

ICBO

−

−0.25

Emitter−Base Cutoff Current

(VEB = −3.0 Vdc, IB = 0)

IEBO

−

−0.1

DC Current Gain (Note 2)

(VCE = −10 Vdc, IC = −1.0 mAdc)

(VCE = −10 Vdc, IC = −10 mAdc)

(VCE = −10 Vdc, IC = −30 mAdc)

hFE1

hFE2

hFE3

120

200

−

Collector-Emitter Saturation Voltage (Note 2)

(IC = −20 mAdc, IB = −2.0 mAdc)

VCE(sat)

−

−0.5

Vdc

Base−Emitter Saturation Voltage

(IC = −20 mAdc, IB = −2.0 mAdc)

VBE(sat)

−

−0.9

Vdc

SMALL SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mAdc, VCE = −20 Vdc, f = 20 MHz)

−

MHz

Collector−Base Capacitance

(VCB = −20 Vdc, IE = 0, f = 1.0 MHz)

Ccb

−

6.0

2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.

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