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BAS16D датащи(PDF) 1 Page - Vishay Siliconix |
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BAS16D датащи(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page ![]() BAS16D www.vishay.com Vishay Semiconductors Rev. 1.4, 13-May-13 1 Document Number: 85723 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: 18/10K per 13 " reel (8 mm tape), 10K/box 08/3K per 7 " reel (8 mm tape), 15K/box FEATURES • Silicon epitaxial planar diode • Fast switching diode • AEC-Q101 qualified • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note (1) Valid provided electrodes are kept at ambient temperature PARTS TABLE PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS BAS16D BAS16D-E3-08 or BAS16D-E3-18 Single diode A6 Tape and reel BAS16D-HE3-08 or BAS16D-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 75 V Repetitive peak reverse voltage VRRM 100 V Forward current (continuous) IF 250 mA Non-repetitive peak forward current t = 1 μs IFSM 2A t = 1 ms IFSM 1A t = 1 s IFSM 0.5 A Power dissipation (1) Ptot 350 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air (1) RthJA 375 K/W Maximum junction temperature Tj 150 °C Storage temperature range (1) Tstg - 65 to + 150 °C Operating temperature range Top - 55 to + 150 °C |
Аналогичный номер детали - BAS16D |
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Аналогичное описание - BAS16D |
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