HSMS-285Y datasheet(2/4 Pages) AVAGO

номер детали	HSMS-285Y

подробное описание детали	Zero Bias Schottky Detector Diodes In Surface Mount SOD-523 Package

PDF	4 Pages

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производитель	AVAGO [AVAGO TECHNOLOGIES LIMITED]

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Table 2. Electrical Specifications at Tc = +25

°°°°°C

Table 3. RF Electrical Specifications, Tc = +25

°°°°°C

Maximum Forward Voltage VF (mV)

Maximum Reverse

Leakage IR (uA)

Typical Capacitance

CT (pF)

150

250

175

0.30

Test Conditions

IF = 0.1 mA

IF = 1.0 mA

VR = 2V

VR = -0.5 V to -1.0 V

f = 1MHz

Typical Tangential Sensitivity

TSS (dBm) @ f = 915 MHz

Typical Voltage Sensitivity

(mV/

µW) @ f = 915 MHz

Typical Video Resistance

RV (K

Ω)

-57

8.0

Test Conditions

Video Bandwidth = 2 MHz

Zero Bias

Power in = -40 dBm

RL = 100 K

Ω, Zero Bias

Zero Bias

0.01

0.1

100

0 0.2 0.4 0.6 0.8

1 1.2 1.4 1.6 1.8

VF - Forward Voltage - V

Figure 1. Typical Forward Current vs

Forward Voltage.

Figure 2. 25

°°°°°C Output Voltage vs Input

Power at Zero Bias.

Figure 3. 25

°°°°°C Expanded Output Voltage

vs Input Power. See Figure 2.

Figure 4. Output Voltage vs Temperature.

Typical Parameters

-50

0.1

POWER IN (dBm)

-30

-20

10000

-40

100

-10

1000

R L = 100 KΩ

DIODES TESTED IN FIXED-TUNED

FR4 MICROSTRIP CIRCUITS.

915 MHz

-50

0.3

POWER IN (dBm)

-30

-40

R L = 100 KΩ

915 MHz

DIODES TESTED IN FIXED-TUNED

FR4 MICROSTRIP CIRCUITS.

0.9

TEMPERATURE (C)

40 50

3.1

2.1

1.5

100

2.5

20 30

1.1

1.3

1.7

1.9

2.3

2.7

2.9

MEASUREMENTS MADE USING A

FR4 MICROSTRIP CIRCUIT.

FREQUENCY = 2.45 GHz

P IN = -40 dBm

R L = 100 KΩ

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