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HSMS-282Y датащи(PDF) 2 Page - AVAGO TECHNOLOGIES LIMITED |
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HSMS-282Y датащи(HTML) 2 Page - AVAGO TECHNOLOGIES LIMITED |
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2 / 5 page ![]() 2 0.01 0.1 1 10 100 0 0.1 0.2 0.3 0. 0.5 FORWARD VOLTAGE (V) 125 oC 75 o C 25 o C -25 o C 1 10 100 1000 0.1 1 10 100 FORWARD CURRENT (mA) 0 0.2 0. 0.6 0.8 1 0 2 6 8 REVERSE VOLTAGE (V) Typical Performance Curves at Tc = +25 °C Figure 1. Forward Currect vs.Forward Voltage at temperature Figure 2. Reverse Current vs. Reverse Voltage at temperature Figure 3. Dynamic Resistance vs. Forward Current Figure 4. Total Capacitance vs. Reverse Bias at 1MHz Notes : 1. Effective carrier lifetime( τ) for the diode is 100 ps maximum measured with Krakaver method at 5 mA 2. RD = Rs + 5.2 Ohm @ 25 °C and IF = 5 mA Table 2. Electrical Specifications at Tc = +25 °C Minimum Breakdown Voltage VBR (V) Maximum Forward Voltage VF (mV) Maximum Forward Voltage VF (V) Maximum Reverse Leakage IR (nA) Maximum Capacitance CT (pF) Typical Dynamic Resistance RD (Ohm)[2] 15 340 0.5 100 1.0 12 Test Conditions VR =VBR Measure IR ≤ 100mA IF = 1mA IF = 10mA VR = 1V VR = 0 Vf = 1 MHz IF = 5mA 1 10 100 1000 10000 100000 0 5 10 15 REVERSE VOLTAGE (V) 25 o C 75 o C 125 oC |
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