IR2010S datasheet(2/16 Pages) IRF

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IR2010(S) & (PbF)

(Please refer to the Design Tip DT97-3 for more details).

Note 1: Logic operational for VS of -4 to +200V. Logic state held for VS of -4V to -VBS.

Note 2: When VDD < 5V, the minimum VSS offset is limited to -VDD.

Symbol

Definition

Min.

Max.

Units

High side floating supply absolute voltage

VS + 10

VS + 20

High side floating supply offset voltage

Note 1

200

VHO

High side floating output voltage

VCC

Low side fixed supply voltage

VLO

Low side output voltage

VCC

VDD

Logic supply voltage

VSS + 3

VSS + 20

VSS

Logic supply offset voltage

-5 (Note 2)

VIN

Logic input voltage (HIN, LIN & SD)

VSS

VDD

Ambient temperature

-40

125

°C

Recommended Operating Conditions

The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the

recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15V differential. Typical

ratings at other bias conditions are shown in figures 24 and 25.

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-

eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured

under board mounted and still air conditions.

Symbol

Definition

Min.

Max.

Units

High side floating supply voltage

-0.3

225

High side floating supply offset voltage

VB - 25

VB + 0.3

VHO

High side floating output voltage

VS - 0.3

VB + 0.3

VCC

Low side fixed supply voltage

-0.3

VLO

Low side output voltage

-0.3

VCC + 0.3

VDD

Logic supply voltage

-0.3

VSS + 25

VSS

Logic supply offset voltage

VCC - 25

VCC + 0.3

VIN

Logic input voltage (HIN, LIN & SD)

VSS - 0.3

VDD + 0.3

dVs/dt

Allowable offset supply voltage transient (figure 2)

—

V/ns

Package power dissipation @ TA ≤ +25°C

(14 lead DIP)

—

1.6

(16 lead SOIC)

—

1.25

RTHJA

Thermal resistance, junction to ambient

(14 lead DIP)

—

(16 lead SOIC)

—

100

Junction temperature

—

150

Storage temperature

-55

150

Lead temperature (soldering, 10 seconds)

—

300

°C/W

°C

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