SBAS16HT3G datasheet(2/4 Pages) ONSEMI

номер детали	SBAS16HT3G

подробное описание детали	Switching Diode

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производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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BAS16H, SBAS16H

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(VR = 100 Vdc)

(VR = 75 Vdc, TJ = 150°C)

(VR = 25 Vdc, TJ = 150°C)

−

1.0

mAdc

Reverse Breakdown Voltage

(IBR = 100 mAdc)

V(BR)

100

−

Vdc

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

−

715

855

1000

1250

Diode Capacitance

(VR = 0, f = 1.0 MHz)

−

2.0

Forward Recovery Voltage

(IF = 10 mAdc, tr = 20 ns)

VFR

−

1.75

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, RL = 50 W)

trr

−

6.0

Stored Charge

(IF = 10 mAdc to VR = 5.0 Vdc,

RL = 500 W)

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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