P-Channel Enhancement Mode MOSFET

Copyright

 ANPEC Electronics Corp.

Rev. A.1 - Jun., 2003

www.anpec.com.tw

1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain

the latest version of relevant information to verify before placing orders.

APM2313

Ordering and Marking Information

Features

Applications

R

Low R

DS(ON)

Portable Equipment and Battery Powered

Systems.

A P M 23 13

H andling C ode

Te m p . R a ng e

P a ckage C o de

P a ckage C o de

A : S O T -2 3

O perating Junction T e m p . R ange

C : -5 5 to 1 5 0 C

H andling C ode

T R : T ape & R eel

°

A P M 2313 A :

M 13X

X - Da te Co d e

Symbol

Parameter

Rating

Unit

Drain-Source Voltage

-20

V

GSS

Gate-Source Voltage

±10

V

I

D

*

Maximum Drain Current – Continuous

-1.8

I

DM

Maximum Drain Current – Pulsed

-7

A

* Surface Mounted on FR4 Board, t

≤ 10 sec.

Pin Description

G

D

S

Top View of SOT-23

P-Channel MOSFET

G

S

D