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LMH6643MA датащи(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
номер детали LMH6643MA
подробное описание детали  3V, Low Power, 130MHz, 75mA Rail-to-Rail Output Amplifiers
PDF  22 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMH6643MA датащи(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance
2KV (Note 2)
200V (Note 9)
V
IN Differential
±2.5V
Output Short Circuit Duration
(Note 3), (Note 11)
Supply Voltage (V
+ -V)
13.5V
Voltage at Input/Output pins
V
+ +0.8V, V−0.8V
Input Current
±10mA
Storage Temperature Range
−65˚C to +150˚C
Junction Temperature (Note 4)
+150˚C
Soldering Information
Infrared or Convection Reflow(20 sec)
235˚C
Wave Soldering Lead Temp.(10 sec)
260˚C
Operating Ratings (Note 1)
Supply Voltage (V
+ –V)
3V to 12.8V
Junction Temperature Range (Note 4)
−40˚C to +85˚C
Package Thermal Resistance (Note 4) (
θ
JA)
SOT23-5
265˚C/W
SOIC-8
190˚C/W
MSOP-8
235˚C/W
SOIC-14
145˚C/W
TSSOP-14
155˚C/W
3V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at T
J = 25˚C, V
+ = 3V, V= 0V, V
CM =VO =V
+/2, and R
L =2k
Ω to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 6)
Typ
(Note 5)
Max
(Note 6)
Units
BW
−3dB BW
A
V = +1, VOUT = 200mVPP
80
115
MHz
A
V = +2, −1, VOUT = 200mVPP
46
BW
0.1dB
0.1dB Gain Flatness
A
V = +2, RL = 150
Ω to V+/2,
R
L = 402
Ω,V
OUT = 200mVPP
19
MHz
PBW
Full Power Bandwidth
A
V = +1, −1dB, VOUT =1VPP
40
MHz
e
n
Input-Referred Voltage Noise
f = 100kHz
17
nV/
f = 1kHz
48
i
n
Input-Referred Current Noise
f = 100kHz
0.90
pA/
f = 1kHz
3.3
THD
Total Harmonic Distortion
f = 5MHz, V
O =2VPP,AV = −1,
R
L = 100
Ω to V+/2
−48
dBc
DG
Differential Gain
V
CM = 1V, NTSC, AV =+2
R
L =150
Ω to V+/2
0.17
%
R
L =1k
Ω to V+/2
0.03
DP
Differential Phase
V
CM = 1V, NTSC, AV =+2
R
L =150
Ω to V+/2
0.05
deg
R
L =1k
Ω to V+/2
0.03
CT Rej.
Cross-Talk Rejection
f = 5MHz, Receiver:
R
f =Rg = 510
Ω,A
V =+2
47
dB
T
S
Settling Time
V
O =2VPP, ±0.1%, 8pF Load,
V
S =5V
68
ns
SR
Slew Rate (Note 8)
A
V = −1, VI =2VPP
90
120
V/µs
V
OS
Input Offset Voltage
±1
±5
±7
mV
TC V
OS
Input Offset Average Drift
(Note 12)
±5
µV/˚C
I
B
Input Bias Current
(Note 7)
−1.50
−2.60
−3.25
µA
I
OS
Input Offset Current
20
800
1000
nA
R
IN
Common Mode Input
Resistance
3M
C
IN
Common Mode Input
Capacitance
2pF
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