2

Parameter

Units

Absolute Max.

Device Voltage

V

10

dBm

+30

dBm

20

Channel Temperature

°C

150

Storage Temperature

°C

-65 to 150

Notes:

1. Operation of this device above any one of

these parameters may cause permanent

damage.

2. Assuming DC quiescent conditions and

4. Channel-to-board

thermal

resistance

measured using 150°C Liquid Crystal

Measurement method.

Electrical Specifications

Symbol

Parameter and Test Condition

Units

Min.

Typ.

Max.

Frequency Range, RF

MHz

400

3500

Frequency Range, LO

MHz

400

3500

Frequency Range, IF

MHz

DC

300

Id

Device Current

mA

22

26

30

0.89

Conversion Loss

dB

6

6.9

0.08

Input Third Order Intercept Point

dBm

22

27

0.43

SSB Noise Figure

dB

12.5

Output Power at 1 dB Compression

dBm

9

RF Port Return Loss

dB

19

LO Port Return Loss

dB

24

IF Port Return Loss

dB

21

LO-RF Isolation

dB

34

LO-IF Isolation

dB

56

RF-IF Isolation

dB

33

Notes:

1. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial

characterization of

this product and is intended to be used as an estimate for distribution of the typical specification.

3. Conversion loss, P1dB and NF data have de-embedded balun loss = 0.8 dB @ 210 MHz.

Figure 1. IAM-92516 Test Board.



Simplified Schematic