2N3441 datasheet(1/2 Pages) MICROSEMI

номер детали	2N3441

подробное описание детали	NPN POWER SILICON TRANSISTOR

PDF	2 Pages

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производитель	MICROSEMI [Microsemi Corporation]

домашняя страница	http://www.microsemi.com

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TECHNICAL DATA

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/369

Devices

Qualified Level

2N3441

JANTX

MAXIMUM RATINGS

Ratings

Symbol

Value

Units

Collector-Emitter Voltage

VCEO

140

Vdc

Collector-Base Voltage

VCBO

160

Vdc

Collector-Emitter Voltage

VCER

150

Vdc

Emitter-Base Voltage

VEBO

7.0

Vdc

Base Current

IB

2.0

Adc

Collector Current

IC

3.0

Adc

Total Power Dissipation

@ TA = +25

0C (1)

@ TC = +25

0C (2)

PT

3.0

25

W

Operating & Storage Junction Temperature Range

TJ, Tstg

-65 to +200

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

Junction-to-Ambient

RθJC

RθJA

7.0

58.5

0C/W

1)

Derate linearly @ 17.1 mW/

0C for TA > +250C

2)

Derate linearly @ 143 mW/

0C for TC > +250C

TO-66* (TO-213AA)

*See Appendix A for

Package Outline

ELECTRICAL CHARACTERISTICS (TC = 25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Voltage

IC = 100 mAdc

V(BR)CEO

140

Vdc

Collector-Emitter Breakdown Voltage

IC = 100 mAdc, RBE = 100 Ω

V(BR)CER

150

Vdc

Collector-Emitter Breakdown Voltage

IC = 100 mAdc, VBE = -1.5 Vdc

V(BR)CEX

160

Vdc

Collector-Base Cutoff Current

VCB = 140 Vdc, VBE = -1.5 Vdc

ICEX

1.0

mAdc

Emitter-Base Cutoff Current

VEB = 7.0 Vdc

IEBO

1.0

mAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

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