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PESDXS2UAT датащи(PDF) 5 Page - NXP Semiconductors

номер детали PESDXS2UAT
подробное описание детали  Double ESD protection diodes in SOT23 package
PDF  13 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PESDXS2UAT датащи(HTML) 5 Page - NXP Semiconductors

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2004 Feb 18
5
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UAT series
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VRWM
reverse stand-off voltage
PESD3V3S2UAT
−−
3.3
V
PESD5V0S2UAT
−−
5V
PESD12VS2UAT
−−
12
V
PESD15VS2UAT
−−
15
V
PESD24VS2UAT
−−
24
V
IRM
reverse leakage current
PESD3V3S2UAT
VRWM = 3.3 V
−
0.7
2
µA
PESD5V0S2UAT
VRWM = 5 V
−
0.1
1
µA
PESD12VS2UAT
VRWM = 12 V
−
<1
50
nA
PESD15VS2UAT
VRWM = 15 V
−
<1
50
nA
PESD24VS2UAT
VRWM = 24 V
−
<1
50
nA
VBR
breakdown voltage
IZ = 5 mA
PESD3V3S2UAT
5.2
5.6
6.0
V
PESD5V0S2UAT
6.4
6.8
7.2
V
PESD12VS2UAT
14.7
15.0
15.3
V
PESD15VS2UAT
17.6
18.0
18.4
V
PESD24VS2UAT
26.5
27.0
27.5
V
Cd
diode capacitance
f = 1 MHz; VR =0V
PESD3V3S2UAT
−
207
300
pF
PESD5V0S2UAT
−
152
200
pF
PESD12VS2UAT
−
38
75
pF
PESD15VS2UAT
−
32
70
pF
PESD24VS2UAT
−
23
50
pF
V(CL)R
clamping voltage
notes 1 and 2
PESD3V3S2UAT
Ipp =1A
−−
7V
Ipp =18A
−−
20
V
PESD5V0S2UAT
Ipp =1A
−−
9V
Ipp =15A
−−
20
V
PESD12VS2UAT
Ipp =1A
−−
19
V
Ipp =5A
−−
35
V
PESD15VS2UAT
Ipp =1A
−−
23
V
Ipp =5A
−−
40
V
PESD24VS2UAT
Ipp =1A
−−
36
V
Ipp =3A
−−
70
V



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