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SUM50N03 датащи(PDF) 2 Page - Vishay Siliconix

номер детали SUM50N03
подробное описание детали  SPICE Device Model SUM50N03-13LC
PDF  3 Pages
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
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SUM50N03 датащи(HTML) 2 Page - Vishay Siliconix

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SPICE Device Model SUM50N03-13LC
Vishay Siliconix
www.vishay.com
Document Number: 71918
2
09-Jun-04
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.8
V
On-State Drain Current
a
ID(on)
VDS = 5 V, VGS = 10 V
434
A
VGS = 10 V, ID = 25 A
0.010
0.010
VGS = 10 V, ID = 25 A, TJ = 125°C
0.016
0.016
VGS = 10 V, ID = 25 A, TJ = 175°C
0.018
0.018
Drain-Source On-State Resistance
a
rDS(on)
VGS = 4.5 V, ID = 24 A
0.014
0.014
Ω
Forward Voltage
a
VSD
IS = 50 A, VGS = 0 V
0.90
1.3
V
Dynamic
b
Input Capacitance
Ciss
2009
1960
Output Capacitance
Coss
367
380
Reverse Transfer Capacitance
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
111
180
pF
Total Gate Charge
c
Qg
34
35
Gate-Source Charge
c
Qgs
7.6
7.6
Gate-Drain Charge
c
Qgd
VDS = 15 V, VGS = 10 V, ID = 50 A
5.6
5.6
nC
Turn-On Delay Time
c
td(on)
23
10
Rise Time
c
tr
19
93
Turn-Off Delay Time
c
td(off)
8
30
Fall Time
c
tf
VDD = 15 V, RL = 0.30 Ω
ID ≅ 50 A, VGEN = 10 V, RG = 2.5 Ω
10
10
Reverse Recovery Time
trr
IF = 50,A di/dt = 100 A/µs
29
35
ns
Notes
a.
Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2%.
b.
Guaranteed by design, not subject to production testing.
c.
Independent of operating temperature.



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