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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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WFD2N60B датащи(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFD2N60B датащи(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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2 / 8 page  www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 2/8 WFD2N60B Product Description Silicon Silicon Silicon Silicon N-Channel N-Channel N-Channel N-Channel MOSFET MOSFET MOSFET MOSFET WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS Electrical Characteristics(Tc=25℃) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS=±30V,VDS=0V - - ±100 nA Gate-source breakdown voltage V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V Drain cut -off current IDSS VDS=600V,VGS=0V - - 10 µA VDS=480V,Tc=125℃ - 100 µA Drain -source breakdown voltage V(BR)DSS ID=250 µA,VGS=0V 600 - - V Gate threshold voltage VGS(th) VDS = VGS B ,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=1A - 4.5 5.0 Ω Forward Transconductance gfs VDS=50V,ID=1A - 2.25 - S Input capacitance Ciss VDS=25V, VGS=0V, f=1MHz - 190 230 pF Reverse transfer capacitance Crss - 1.8 2.1 Output capacitance Coss - 15 20 Switching time Turn-on Rise time tr VDD=300V, ID=2A， RG=25Ω， (Note4,5) - 23 45 ns Turn-on delay time Td(on) - 7 23 Turn-off Fall time tf - 24 46 Turn-off delay time Td(off) - 22 43 Total gate charge(gate-source plus gate-drain) Qg VDD=480V, VGS=10V, ID=2A (Note4,5) - 5.3 6 nC Gate-source charge Qgs - 1.7 - Gate-drain("miller") Charge Qgd - 1.8 - Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 2.0 A Pulse drain reverse current IDRP - - - 8.0 A Forward voltage(diode) VDSF IDR=2.0A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=2.A,VGS=0V, dIDR / dt =100 A / µs - 180 - ns Reverse recovery charge Qrr - 0.72 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=56mH IAS=2A,VDD=50V,RG=25Ω ,Starting TJ=25℃ 3.ISD≤2A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution |
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