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APM7313 датащи(PDF) 2 Page - Anpec Electronics Coropration

номер детали APM7313
подробное описание детали  Dual N-Channel Enhancement Mode MOSFET
PDF  9 Pages
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производитель  ANPEC [Anpec Electronics Coropration]
домашняя страница  http://www.anpec.com.tw
Logo ANPEC - Anpec Electronics Coropration

APM7313 датащи(HTML) 2 Page - Anpec Electronics Coropration

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Copyright
 ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
www.anpec.com.tw
2
APM7313
APM7313
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS=0V , IDS=250µA
30
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS=24V , VGS=0V
1
µA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS , IDS=250µA
11.5
2
V
I
GSS
Gate Leakage Current
V
GS=±20V , VDS=0V
±100
nA
V
GS=10V , IDS=3.5A
21
28
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS=4.5V , IDS=2A
27
42
m
Ω
V
SD
a
Diode Forward Voltage
I
SD=2A , VGS=0V
0.7
1.3
V
Dynamic
b
Q
g
Total Gate Charge
30
36
Q
gs
Gate-Source Charge
5.8
Q
gd
Gate-Drain Charge
V
DS=15V , IDS= 10A
V
GS=10V
3.8
nC
t
d(ON)
Turn-on Delay Time
11
22
T
r
Turn-on Rise Time
17
33
t
d(OFF)
Turn-off Delay Time
37
68
T
f
Turn-off Fall Time
V
DD=15V , IDS=2A ,
V
GEN=10V , RG=6Ω
20
38
ns
C
iss
Input Capacitance
1200
C
oss
Output Capacitance
210
C
rss
Reverse Transfer Capacitance
V
GS=0V
V
DS=25V
Frequency=1.0MHz
95
pF
Symbol
Parameter
Rating
Unit
I
D
*
Maximum Drain Current – Continuous
6
I
DM
Maximum Drain Current – Pulsed
24
A
T
A=25°C
2.5
W
P
D
Maximum Power Dissipation
T
A=100°C
1.0
W
T
J
Maximum Junction Temperature
150
°C
T
STG
Storage Temperature Range
-55 to 150
°C
RθjA
Thermal Resistance – Junction to Ambient
50
°C/W
* Surface Mounted on FR4 Board, t
≤ 10 sec.
Notes
a : Pulse test ; pulse width
≤300µs, duty cycle ≤ 2%
b : Guaranteed by design, not subject to production testing
Electrical Characteristics (T
A = 25°C unless otherwise noted)
Absolute Maximum Ratings (Cont.) (T
A = 25°C unless otherwise noted)



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