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WS3441AS8P датащи(PDF) 4 Page - Shenzhen Winsemi Microelectronics Co., Ltd

номер детали WS3441AS8P
подробное описание детали  Non-isolated Buck Offline LED Driver
PDF  8 Pages
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производитель  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
домашняя страница  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

WS3441AS8P датащи(HTML) 4 Page - Shenzhen Winsemi Microelectronics Co., Ltd

  WS3441AS8P Datasheet HTML 1Page - Shenzhen Winsemi Microelectronics Co., Ltd WS3441AS8P Datasheet HTML 2Page - Shenzhen Winsemi Microelectronics Co., Ltd WS3441AS8P Datasheet HTML 3Page - Shenzhen Winsemi Microelectronics Co., Ltd WS3441AS8P Datasheet HTML 4Page - Shenzhen Winsemi Microelectronics Co., Ltd WS3441AS8P Datasheet HTML 5Page - Shenzhen Winsemi Microelectronics Co., Ltd WS3441AS8P Datasheet HTML 6Page - Shenzhen Winsemi Microelectronics Co., Ltd WS3441AS8P Datasheet HTML 7Page - Shenzhen Winsemi Microelectronics Co., Ltd WS3441AS8P Datasheet HTML 8Page - Shenzhen Winsemi Microelectronics Co., Ltd  
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www.winsemi.com Tel : +86-755-8250 6288
Fax : +86-755-8250 6299
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WS3441A ProductDescription
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Electrical Characteristics (Unless otherwise specified, VCC=7V and TA =25 ℃)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Supply Voltage Section
Vcc_clamp
VCC Clamp Voltage
Ivcc=1mA
7.3
V
Icc_clamp
VCC Clamp current
2.5
mA
VCC_ST
VCC Turn On Threshold
VCC Rising
6.9
V
Vuvlo_HYS
VCC Turn off Hysteresis
VCC Falling
1.5
V
Ist
VCC Startup Current
VCC<VCC_ST-0.5V
230
270
uA
Iop
VCC Operating Current
200
uA
Current Sense Section
Vcs_th
Threshold Voltage for Peak
Current Limit
390
400
410
mV
TLEB
Leading Edge Blanking Time
for Current Sense
350
ns
TDELAY
Switch Off Delay Time
300
ns
Internal Time Control Section
TOFF_MIN
Minimum OFF Time
3
us
TOFF_MAX
Maximum OFF Time
340
us
TON_MAX
Maximum On Time
53
us
MOSFET Section
RDSON
Static Drain-source
On-resistance
Vcc=7V/Id=0.5A
12.8
16
ohm
VDS_BD
Drain-Source Breakdown
Voltage
Vgs=0V/Id=250uA
500
V
Idss
Power MOSFET Drain
Leakage Current
Vgs=0V/Vds=500V
10
uA
ROVP section
VROVP
ROVP Pin Voltage
0.5
V
Thermal Regulation Section
TSD
Thermal Shutdown
Temperature
160
℃
TSD_HYS
Thermal Shutdown Hysteresis
20
℃
T_comp
Thermal Regulation
Temperature
150
℃



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