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LM4897 датащи(PDF) 3 Page - National Semiconductor (TI) |
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LM4897 датащи(HTML) 3 Page - National Semiconductor (TI) |
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3 / 14 page ![]() Absolute Maximum Ratings (Note 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage 6.0V Storage Temperature −65˚C to +150˚C Input Voltage −0.3V to V DD +0.3V Power Dissipation (Note 3) Internally Limited ESD Susceptibility (Note 4) 2000V ESD Susceptibility (Note 5) 200V Junction Temperature 150˚C Thermal Resistance θ JC (MUB10A) 56˚C/W θ JA (MUB10A) 190˚C/W Operating Ratings Temperature Range T MIN ≤ T A ≤ T MAX −40˚C ≤ T A ≤ 85˚C Supply Voltage 2.6V ≤ V DD ≤ 5.5V Electrical Characteristics V DD = 5.0V (Notes 1, 2) The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for T A = 25˚C. Symbol Parameter Conditions LM4897 Units (Limits) Typical Limit (Note 6) (Notes 7, 8) I DD Quiescent Power Supply Current V IN = 0V, 8 Ω BTL 5 9 mA (max) I SD Shutdown Current V shutdown = GND 0.1 2 µA (max) V OS Output Offset Voltage 4 30 mV (max) P o Output Power THD+N = 1% (max), f = 1kHz 1.1 0.9 W (min) THD+N Total Harmonic Distortion+Noise P o = 0.4Wrms, f = 1kHz 0.1 % PSRR Power Supply Rejection Ratio V ripple = 200mVpp sine wave, C B = 1.0µF Input terminated with 10 Ω to GND 63 (f = 1kHz) 62 (f = 217Hz) 55 55 dB (min) V SDIH Shutdown High Input Voltage 1.4 V (min) V SDIL Shutdown Low Input Voltage 0.4 V (max) V ON Output Noise A-Weighted, Measured across 8 Ω BTL Input terminated with 10 Ω to ground 26 µV RMS T ON Turn-On Time C BYPASS = 1µF 25 35 ms (max) Electrical Characteristics V DD = 3.0V (Notes 1, 2) The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for T A = 25˚C. Symbol Parameter Conditions LM4897 Units (Limits) Typical Limit (Note 6) (Notes 7, 8) I DD Quiescent Power Supply Current V IN = 0V, 8 Ω BTL 4 8 mA (max) I SD Shutdown Current V shutdown = GND 0.1 2 µA (max) P o Output Power THD+N = 1% (max), f = 1kHz 350 320 mW (min) V OS Output Offset Voltage 4 30 mV (max) THD+N Total Harmonic Distortion+Noise P o = 0.15Wrms, f = 1kHz 0.1 % PSRR Power Supply Rejection Ratio V ripple = 200mVpp sine wave, C B = 1.0µF Input terminated with 10 Ω to ground 63 (f = 1kHz) 62 (f = 217Hz) 55 55 dB (min) V SDIH Shutdown High Input Voltage 1.4 V (min) V SDIL Shutdown Low Input Voltage 0.4 V (max) V ON Output Voltage Noise A-Weighted, Measured across 8 Ω BTL Input terminated with 10 Ω to ground 26 µV RMS www.national.com 3 |
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