© 2001 IXYS All rights reserved

1 - 2

V

RRM

= 2400 V

I

F(AV)M

= 55 A

t

rr

= 220 ns

Epitaxial Diode

Advanced Technical Information

DSEE 55-24N1F

Data according to IEC 60747 and refer to a single diode unless otherwise stated.

IXYS reserves the right to change limits, test conditions and dimensions.

1

5

Features

- fast and soft reverse recovery –

low switching losses

- avalanche rated

- low leakage current

- isolated back surface

- low coupling capacity between pins

and heatsink

- enlarged creepage towards heatsink

- enlarged creepage between pins

- application friendly pinout

- high reliability

- industry standard outline

Applications

• rectifiers

- high frequency rectifiers, output

rectifiers of switched mode power

supplies

- mains rectifiers with minimized

emission of disturbances

• diodes in snubber networks

• high voltage diodes using the series

connection in the component

Rectifier Bridge

Symbol

Conditions

Maximum Ratings

V

RRM

2400

V

V

RRM

1200

V

I

FAV

T

53

A

I

F(AV)M

T

55

A

I

FSM

T

500

A

E

AS

I

28

mJ

P

tot

T

(per diode)

200

W

Symbol

Conditions

Characteristic Values

(T

min.

typ.

max.

V

F

I

25°C

2.0

2.5

V

T

1.5

V

I

R

V

25°C

1

mA

T

1

mA

I

RM

I

79

A

t

rr

V

220

ns

R

thJC

(per diode)

0.63 K/W

Data according to IEC 60747 and refer to a single diode unless otherwise stated.

Diodes connected in series

3

1

3

5