 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
IRF7316 датащи(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
IRF7316 датащи(HTML) 2 Page - International Rectifier |
|
|
2 / 7 page  IRF7316 Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage -0.78 -1.0 V TJ = 25°C, IS = -1.7A, VGS = 0V trr Reverse Recovery Time 44 66 ns TJ = 25°C, IF = -1.7A Qrr Reverse RecoveryCharge 42 63 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics -30 -2.5 A
Surface mounted on FR-4 board, t ≤ 10sec. Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.8A. Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.022 V/°C Reference to 25°C, ID = -1mA 0.042 0.058 VGS = -10V, ID = -4.9A 0.076 0.098 VGS = -4.5V, ID = -3.6A VGS(th) Gate Threshold Voltage -1.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 7.7 S VDS = -15V, ID = -4.9A -1.0 VDS = -24V, VGS = 0V -25 VDS = -24V, VGS = 0V, TJ = 55°C Gate-to-Source Forward Leakage 100 VGS = -20V Gate-to-Source Reverse Leakage -100 VGS = 20V Qg Total Gate Charge 23 34 ID = -4.9A Qgs Gate-to-Source Charge 3.8 5.7 nC VDS = -15V Qgd Gate-to-Drain ("Miller") Charge 5.98.9 VGS = -10V, See Fig. 10 td(on) Turn-On Delay Time 13 19VDD = -15V tr Rise Time 13 20 ID = -1.0A td(off) Turn-Off Delay Time 34 51 RG = 6.0Ω tf FallTime 32 48 RD = 15Ω Ciss Input Capacitance 710 VGS = 0V Coss Output Capacitance 380 pF VDS = -25V Crss Reverse Transfer Capacitance 180 = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns S D G |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
