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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF6691 датащи(PDF) 2 Page - International Rectifier |
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IRF6691 датащи(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF6691 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient –––12––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.8 2.5 m Ω ––– 1.2 1.8 VGS(th) Gate Threshold Voltage 1.6 ––– 2.5 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -4.1 ––– mV/°C ––– ––– 1.4 mA IDSS Drain-to-Source Leakage Current ––– ––– 500 µA ––– ––– 5 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 110 ––– ––– S Qg Total Gate Charge ––– 47 71 Qgs1 Pre-Vth Gate-to-Source Charge –––14––– Qgs2 Post-Vth Gate-to-Source Charge ––– 4.4 ––– nC Qgd Gate-to-Drain Charge –––15––– Qgodr Gate Charge Overdrive ––– 14 ––– See Fig. 17 Qsw Switch Charge (Qgs2 + Qgd) –––19––– Qoss Output Charge –––30––– nC RG Gate Resistance ––– 0.60 1.5 Ω td(on) Turn-On Delay Time –––23––– tr Rise Time –––95––– ns td(off) Turn-Off Delay Time –––25––– tf Fall Time –––10––– Ciss Input Capacitance –––6580––– Coss Output Capacitance ––– 2070 ––– pF Crss Reverse Transfer Capacitance ––– 840 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 32 (Body Diode) A ISM Pulsed Source Current ––– ––– 260 (Body Diode) à VSD Diode Forward Voltage ––– ––– 0.65 V trr Reverse Recovery Time ––– 32 48 ns Qrr Reverse Recovery Charge ––– 26 39 nC MOSFET symbol Clamped Inductive Load VDS = 10V, ID = 26A Conditions ƒ = 1.0MHz VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5V Ãe VDS = 10V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 12V VGS = -12V VGS = 4.5V ID = 10mA, reference to 25°C VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 10mA VGS = 4.5V, ID = 12A e VGS = 10V, ID = 15A e VDS = 20V, VGS = 0V TJ = 25°C, IF = 25A di/dt = 100A/µs e TJ = 25°C, IS = 25A, VGS = 0V e showing the integral reverse p-n junction diode. Typ. ––– ––– ID = 17A VGS = 0V VDS = 10V ID = 26A 230 26 Max. |
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