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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PIC18F442-E/P датащи(PDF) 64 Page - Microchip Technology |
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PIC18F442-E/P датащи(HTML) 64 Page - Microchip Technology |
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64 / 332 page  PIC18FXX2 DS39564B-page 62 2002 Microchip Technology Inc. EXAMPLE 5-3: WRITING TO FLASH PROGRAM MEMORY MOVLW D’64 ; number of bytes in erase block MOVWF COUNTER MOVLW BUFFER_ADDR_HIGH ; point to buffer MOVWF FSR0H MOVLW BUFFER_ADDR_LOW MOVWF FSR0L MOVLW CODE_ADDR_UPPER ; Load TBLPTR with the base MOVWF TBLPTRU ; address of the memory block MOVLW CODE_ADDR_HIGH MOVWF TBLPTRH MOVLW CODE_ADDR_LOW MOVWF TBLPTRL READ_BLOCK TBLRD*+ ; read into TABLAT, and inc MOVF TABLAT, W ; get data MOVWF POSTINC0 ; store data DECFSZ COUNTER ; done? BRA READ_BLOCK ; repeat MODIFY_WORD MOVLW DATA_ADDR_HIGH ; point to buffer MOVWF FSR0H MOVLW DATA_ADDR_LOW MOVWF FSR0L MOVLW NEW_DATA_LOW ; update buffer word MOVWF POSTINC0 MOVLW NEW_DATA_HIGH MOVWF INDF0 ERASE_BLOCK MOVLW CODE_ADDR_UPPER ; load TBLPTR with the base MOVWF TBLPTRU ; address of the memory block MOVLW CODE_ADDR_HIGH MOVWF TBLPTRH MOVLW CODE_ADDR_LOW MOVWF TBLPTRL BSF EECON1,EEPGD ; point to FLASH program memory BCF EECON1,CFGS ; access FLASH program memory BSF EECON1,WREN ; enable write to memory BSF EECON1,FREE ; enable Row Erase operation BCF INTCON,GIE ; disable interrupts MOVLW 55h MOVWF EECON2 ; write 55h MOVLW AAh MOVWF EECON2 ; write AAh BSF EECON1,WR ; start erase (CPU stall) BSF INTCON,GIE ; re-enable interrupts TBLRD*- ; dummy read decrement WRITE_BUFFER_BACK MOVLW 8 ; number of write buffer groups of 8 bytes MOVWF COUNTER_HI MOVLW BUFFER_ADDR_HIGH ; point to buffer MOVWF FSR0H MOVLW BUFFER_ADDR_LOW MOVWF FSR0L PROGRAM_LOOP MOVLW 8 ; number of bytes in holding register MOVWF COUNTER WRITE_WORD_TO_HREGS MOVF POSTINC0, W ; get low byte of buffer data MOVWF TABLAT ; present data to table latch TBLWT+* ; write data, perform a short write ; to internal TBLWT holding register. DECFSZ COUNTER ; loop until buffers are full BRA WRITE_WORD_TO_HREGS |
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