LM5111

Dual 5A Compound Gate Driver

General Description

The LM5111 Dual Gate Driver replaces industry standard

gate drivers with improved peak output current and effi-

ciency. Each “compound” output driver stage includes MOS

and bipolar transistors operating in parallel that together sink

more than 5A peak from capacitive loads. Combining the

unique characteristics of MOS and bipolar devices reduces

drive current variation with voltage and temperature. Under-

voltage lockout protection is also provided. The drivers can

be operated in parallel with inputs and outputs connected to

double the drive current capability. This device is available in

the SOIC-8 package.

Features

n

Independently drives two N-Channel MOSFETs

n

Compound CMOS and bipolar outputs reduce output

current variation

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5A sink/3A source current capability

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Two channels can be connected in parallel to double the

drive current

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Independent inputs (TTL compatible)

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Fast propagation times (25 ns typical)

n

Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF

load)

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Available in dual non-inverting, dual inverting and

combination configurations

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Supply rail under-voltage lockout protection

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Pin compatible with industry standard gate drivers

Typical Applications

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Synchronous Rectifier Gate Drivers

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Switch-mode Power Supply Gate Driver

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Solenoid and Motor Drivers

Package

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SOIC-8

Pin Configurations

20112301

SOIC-8

July 2004

© 2004 National Semiconductor Corporation

DS201123

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