4AM11 datasheet(1/10 Pages) HITACHI

номер детали	4AM11

подробное описание детали	Silicon N-Channel/P-Channel Power MOS FET Array

PDF	10 Pages

Scroll/Zoom	100%

производитель	HITACHI [Hitachi Semiconductor]

домашняя страница	http://www.renesas.com/eng

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1 / 10 page

4AM11

Silicon N-Channel/P-Channel Power MOS FET Array

Application

High speed power switching

Features

•

Low on-resistance

N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A

P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –2.5 A

•

Capable of 4 V gate drive

•

Low drive current

•

High speed switching

•

High density mounting

•

Suitable for H-bridged motor driver

Аналогичный номер детали - 4AM11

производитель	номер детали	датащи	подробное описание детали
Hitachi Semiconductor	4AM13	122Kb / 10P	Silicon N-Channel/P-Channel Power MOS FET Array
	4AM15	59Kb / 6P	Silicon N-Channel/P-Channel Power MOS FET Array
	4AM16	87Kb / 11P	Silicon N-Channel/P-Channel Power MOSFET Array
	4AM17	39Kb / 7P	Silicon N/P Channel MOS FET High Speed Power Switching

производитель	номер детали	датащи	подробное описание детали
Hitachi Semiconductor	4AJ11	35Kb / 6P	Silicon P-Channel Power MOS FET Array
	4AK15	49Kb / 9P	Silicon N-Channel Power MOS FET Array
	4AK18	49Kb / 9P	Silicon N-Channel Power MOS FET Array
	4AK21	36Kb / 6P	Silicon N-Channel Power MOS FET Array
	4AK22	36Kb / 6P	Silicon N-Channel Power MOS FET Array
	4AK25	39Kb / 6P	Silicon N-Channel Power MOS FET Array
	6AM13	65Kb / 12P	Silicon N-Channel/P-Channel Complementary Power MOS FET Array
	6AM14	62Kb / 7P	Silicon N-Channel/P-Channel Power MOS FET Array
	4AM15	59Kb / 6P	Silicon N-Channel/P-Channel Power MOS FET Array
	4AM13	122Kb / 10P	Silicon N-Channel/P-Channel Power MOS FET Array