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LM611 датащи(PDF) 4 Page - National Semiconductor (TI) |
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LM611 датащи(HTML) 4 Page - National Semiconductor (TI) |
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4 / 17 page ![]() Electrical Characteristics (Continued) These specifications apply for V − = GND = 0V, V+ = 5V, V CM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND, unless otherwise specified. Limits in standard typeface are for T J = 25˚C; limits in boldface type apply over the Operating Temperature Range. LM611M LM611AM LM611BI Symbol Parameter Conditions Typical LM611AI LM611I Units (Note 5) Limits LM611C (Note 6) Limits (Note 6) VOLTAGE REFERENCE V R Change with V + = V+ max, ∆V R = VR V ANODE Change (@ V ANODE = V − = GND) − V R 0.7 1.5 1.6 mV max (@ V ANODE = V + − 1.0V) 3.3 3.0 3.0 mV max I FB FEEDBACK Bias I FB;VANODE ≤ VFB ≤ 5.06V 22 35 50 nA max Current 29 40 55 nA max e n V R Noise 10 Hz to 10,000 Hz, V RO = VR 30 µV RMS Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the de- vice beyond its rated operating conditions. Note 2: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below V−, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined and unpredictable when any parasitic diode or transistor is conducting. Note 3: Junction temperature may be calculated using TJ = TA +PD θJA. The given thermal resistance is worst-case for packages in sockets in still air. For packages soldered to copper-clad board with dissipation from one op amp or reference output transistor, nominal θJA is 90˚C/W for the N package and 135˚C/W for the M pack- age. Note 4: Human body model, 100 pF discharged through a 1.5 k Ω resistor. Note 5: Typical values in standard typeface are for TJ = 25˚C; values in boldface type apply for the full operating temperature range. These values represent the most likely parametric norm. Note 6: All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold face type). Note 7: Slew rate is measured with op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V, and the output voltage transition is sampled at 10V and 20V. For falling slew rate, the input voltage is driven from 25V to 5V, and output voltage transition is sampled at 20V and 10V. Note 8: VR is the cathode-feedback voltage, nominally 1.244V. Note 9: Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is 106 • ∆VR/(VR[25˚C]•∆TJ), where ∆VR is the lowest value subtracted from the highest, VR[25˚C] is the value at 25˚C, and ∆TJ is the temperature range. This parameter is guaranteed by design and sample testing. Note 10: Hysteresis is the change in VR caused by a change in TJ, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the hysteresis to the typical value, its junction temperature should be cycled in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C. Note 11: Low contact resistance is required for accurate measurement. Note 12: Military RETS 611AMX electrical test specification is available on request. The LM611AMJ/883 can also be procured as a Standard Military Drawing. Simplified Schematic Diagrams Op Amp DS009221-3 www.national.com 4 |
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