TPCS8209 datasheet(3/7 Pages) TOSHIBA

номер детали	TPCS8209

подробное описание детали	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

PDF	7 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPCS8209

2002-01-17

Electrical Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0 V



±10

µA

Drain cut-OFF current

IDSS

VDS = 20 V, VGS = 0 V



µA

V (BR) DSS

ID = 10 mA, VGS = 0 V



Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −12 V



Gate threshold voltage

Vth

VDS = 10 V, ID = 200 µA

0.5



1.2

VGS = 2.0 V, ID = 3.5 A



VGS = 2.5 V, ID = 3.5 A



Drain-source ON resistance

RDS (ON)

VGS = 4.0 V, ID = 4.0 A



Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 2.5 A

4.6

9.2



Input capacitance

Ciss



1280



Reverse transfer capacitance

Crss



130



Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz



150



Rise time



4.5



Turn-ON time

ton



Fall time



7.3



Switching time

Turn-OFF time

toff

Duty <= 1%, tw = 10 µs



Total gate charge

(gate-source plus gate-drain)



Gate-source charge 1

Qgs1



3.3



Gate-drain (“miller”) charge

Qgd

VDD ∼− 16 V, VGS = 5 V, ID = 5 A



3.5



Source-Drain Ratings and Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP



Forward voltage (diode)

VDSF

IDR = 5 A, VGS = 0 V



−1.2

VDD ∼− 10 V

0 V

VGS

5 V

ID = 2.5 A

VOUT

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