TIP31CG datasheet(2/7 Pages) ONSEMI

2 / 7 page

TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,

TIP32CG (PNP)

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 30 mAdc, IB = 0)

TIP31G, TIP32G

TIP31AG, TIP32AG

TIP31BG, TIP32BG

TIP31CG, TIP32CG

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

TIP31G, TIP32G, TIP31AG, TIP32AG

(VCE = 60 Vdc, IB = 0)

TIP31BG, TIP31CG, TIP32BG, TIP32CG

ICEO

−

0.3

mAdc

Collector Cutoff Current

(VCE = 40 Vdc, VEB = 0)

TIP31G, TIP32G

(VCE = 60 Vdc, VEB = 0)

TIP31AG, TIP32AG

(VCE = 80 Vdc, VEB = 0)

TIP31BG, TIP32BG

(VCE = 100 Vdc, VEB = 0)

TIP31CG, TIP32CG

ICES

−

200

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

1.0

mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 3.0 Adc, VCE = 4.0 Vdc)

hFE

−

Collector−Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 375 mAdc)

VCE(sat)

−

1.2

Vdc

Base−Emitter On Voltage

(IC = 3.0 Adc, VCE = 4.0 Vdc)

VBE(on)

−

1.8

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

3.0

−

MHz

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

TIP31CG датащи(PDF) 2 Page - ON Semiconductor

TIP31CG датащи(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7

датащи скачать

ссылки URL