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TIP41G датащи(PDF) 2 Page - ON Semiconductor |
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TIP41G датащи(HTML) 2 Page - ON Semiconductor |
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2 / 7 page ![]() TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP) www.onsemi.com 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.67 °C/W Thermal Resistance, Junction−to−Ambient RqJA 57 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) TIP41G, TIP42G TIP41AG, TIP42AG TIP41BG, TIP42BG TIP41CG, TIP42CG VCEO(sus) 40 60 80 100 − − − − Vdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP41G, TIP41AG, TIP42G, TIP42AG (VCE = 60 Vdc, IB = 0) TIP41BG, TIP41CG, TIP42BG, TIP42CG ICEO − − 0.7 0.7 mAdc Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) TIP41G, TIP42G (VCE = 60 Vdc, VEB = 0) TIP41AG, TIP42AG (VCE = 80 Vdc, VEB = 0) TIP41BG, TIP42BG (VCE = 100 Vdc, VEB = 0) TIP41CG, TIP42CG ICES − − − − 400 400 400 400 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) hFE 30 15 − 75 − Collector−Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc) VCE(sat) − 1.5 Vdc Base−Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.0 Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 − MHz Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 − − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. |
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