PZT751T1G. datasheet(2/4 Pages) ONSEMI

номер детали	PZT751T1G.

подробное описание детали	PNP Silicon Planar Epitaxial Transistor

PDF	4 Pages

Scroll/Zoom	100%

производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

Logo

2 / 4 page

PZT751

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −10 mAdc, IB = 0)

V(BR)CEO

−60

−

Vdc

Collector−Emitter Breakdown Voltage

(IC = −100 mAdc, IE = 0)

V(BR)CBO

−80

−

Vdc

Emitter−Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

V(BR)EBO

−5.0

−

Vdc

Base−Emitter Cutoff Current

(VEB = −4.0 Vdc)

IEBO

−

−0.1

mAdc

Collector−Base Cutoff Current

(VCB = −80 Vdc, IE = 0)

ICBO

−

−100

nAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = −50 mAdc, VCE = −2.0 Vdc)

(IC = −500 mAdc, VCE = −2.0 Vdc)

(IC = −1.0 Adc, VCE = −2.0 Vdc)

(IC = −2.0 Adc, VCE = −2.0 Vdc)

hFE

−

Collector−Emitter Saturation Voltages

(IC = −2.0 Adc, IB = −200 mAdc)

(IC = −1.0 Adc, IB = −100 mAdc)

VCE(sat)

−

−0.5

−0.3

Vdc

Base−Emitter Voltages

(IC = −1.0 Adc, VCE = −2.0 Vdc)

VBE(on)

−

−1.0

Vdc

Base−Emitter Saturation Voltage

(IC = −1.0 Adc, IB = −100 mAdc)

VBE(sat)

−

−1.2

Vdc

Current−Gain−Bandwidth

(IC = −50 mAdc, VCE = −5.0 Vdc, f = 100 MHz)

−

MHz

2. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle = 2.0%.

PZT751T1G. датащи(PDF) 2 Page - ON Semiconductor

PZT751T1G. датащи(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4

датащи скачать

ссылки URL