MAC228FP Series MAC228AFP Series

2

Motorola Thyristor Device Data

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

2.2

°C/W

Thermal Resistance, Case to Sink

R

θCS

2.2 (typ)

°C/W

Thermal Resistance, Junction to Ambient

R

θJA

60

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

Peak Blocking Current

(VD = Rated VDRM, Gate Open) TJ = 25°C

TJ = 110°C

IDRM

—

—

—

—

10

2

µA

mA

Peak On-State Voltage

(ITM = 11 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%)

VTM

—

—

1.8

Volts

Gate Trigger Current (Continuous dc)

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)

MT2(–), G(+) “A” Suffix Only

IGT

—

—

—

—

5

10

mA

Gate Trigger Voltage (Continuous dc)

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)

MT2(–), G(+) “A” Suffix Only

(VD = Rated VDRM, TC = 110°C, RL = 10 k)

MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)

MT2(–), G(+) “A” Suffix Only

VGT

—

—

0.2

0.2

—

—

—

—

2

2.5

—

—

Volts

Holding Current

(VD = 12 Vdc, ITM = 200 mA, Gate Open)

IH

—

—

15

mA

Gate-Controlled Turn-On Time

(VD = Rated VDRM, ITM = 16 A Peak, IG = 30 mA)

tgt

—

1.5

—

µs

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Waveform, TC = 110°C)

dv/dt

—

25

—

V/

µs

Critical Rate of Rise of Commutation Voltage

(VD = Rated VDRM, ITM = 11.3 A,

Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)

dv/dt(c)

—

5

—

V/

µs

2.0

FIGURE 1 – RMS CURRENT DERATING

FIGURE 2 – ON-STATE POWER DISSIPATION

110

104

92

0

1.0

80

5.0

86

dc

IT(RMS), RMS ON-STATE CURRENT (AMP)

98

α

α = 30°

90

°

60

°

α

α = CONDUCTION ANGLE

120

°

120

°

180

°

120

°

3.0

4.0

6.0

7.0

8.0

2.0

0

1.0

5.0

3.0

4.0

6.0

7.0

8.0

10

8.0

6.0

4.0

2.0

0

α = CONDUCTION ANGLE

α

α

TJ ≈ 110°C

dc

α = 180°

90

°

60

°

120

°

30

°

IT(RMS), RMS ON-STATE CURRENT (AMP)