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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC4789 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC4789 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc Product Specification isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC4789 DESCRIPTION · Silicon NPN triple diffused · High Switching Speed · High Breakdown Voltage · High speed switching time · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Character display horizontal deffection output · Suitable for large size CRT display ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 25 A ICM Collector Current-Pulse 30 A PC Collector Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Аналогичный номер детали - 2SC4789 |
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Аналогичное описание - 2SC4789 |
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