BTA208SD datasheet(2/6 Pages) PHILIPS

2 / 6 page

Philips Semiconductors

Product specification

Three quadrant triacs

BTA208S series D, E and F

guaranteed commutation

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

th j-mb

Thermal resistance

full cycle

2.0

K/W

junction to mounting base

half cycle

2.4

K/W

th j-a

Thermal resistance

pcb (FR4) mounted; footprint as in Fig.14

K/W

junction to ambient

STATIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

BTA208S-

...D

...E

...F

Gate trigger current

D = 12 V; IT = 0.1 A

T2+ G+

0.8

T2+ G-

2.0

T2- G-

3.2

Latching current

D = 12 V; IGT = 0.1 A

T2+ G+

7.2

T2+ G-

8.2

T2- G-

11.0

Holding current

D = 12 V; IGT = 0.1 A

5.3

...D, E, F

On-state voltage

T = 10 A

1.3

1.65

Gate trigger voltage

D = 12 V; IT = 0.1 A

0.7

1.5

D = 400 V; IT = 0.1 A;

0.25

0.4

j = 125 ˚C

Off-state leakage current

D = VDRM(max);

0.1

0.5

j = 125 ˚C

DYNAMIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

BTA208S-

...D

...E

...F

...D

D/dt

Critical rate of rise of

DM = 67% VDRM(max);

2060

7060

µs

off-state voltage

j = 110 ˚C; exponential

waveform; gate open

circuit

com/dt

Critical rate of change of

DM = 400 V; Tj = 110 ˚C;

1.8

3.5

8.5

A/ms

commutating current

T(RMS) = 8 A;

com/dt = 20V/µs; gate

open circuit

com/dt

Critical rate of change of

DM = 400 V; Tj = 110 ˚C;

100

A/ms

commutating current

T(RMS) = 8 A;

com/dt = 0.1V/µs; gate

open circuit

...D, E, F

Gate controlled turn-on

TM = 12 A; VD = VDRM(max);-

µs

time

G = 0.1 A; dIG/dt = 5 A/µs

2 Device does not trigger in the T2-, G+ quadrant.

February 2000

Rev 1.000

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