MJD41C datasheet(2/7 Pages) ONSEMI

2 / 7 page

MJD41C (NPN), MJD42C (PNP)

www.onsemi.com

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

6.25

°C/W

Thermal Resistance, Junction−to−Ambient (Note 2)

RqJA

71.4

°C/W

2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 30 mAdc, IB = 0)

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

ICEO

−

mAdc

Collector Cutoff Current

(VCE = 100 Vdc, VEB = 0)

ICES

−

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

−

0.5

mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 0.3 Adc, VCE = 4 Vdc)

(IC = 3 Adc, VCE = 4 Vdc)

hFE

−

Collector−Emitter Saturation Voltage

(IC = 6 Adc, IB = 600 mAdc)

VCE(sat)

−

1.5

Vdc

Base−Emitter On Voltage

(IC = 6 Adc, VCE = 4 Vdc)

VBE(on)

−

Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 4)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)

−

MHz

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

hfe

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

4. fT = ⎪hfe⎪• ftest.

MJD41C датащи(PDF) 2 Page - ON Semiconductor

MJD41C датащи(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7

датащи скачать

ссылки URL