SFH4780S datasheet(2/13 Pages) OSRAM

2 / 13 page

2015-11-30

Version 1.1

SFH 4780S

Maximum Ratings (TA = 25 °C)

Characteristics (TA = 25 °C)

Parameter

Symbol

Values

Unit

Operation and storage temperature range

op; Tstg

-40 ... 85

°C

Junction temperature

145

°C

Reverse voltage

Forward current

500

Surge current

(tp ≤ 200 µs, D = 0)

FSM

Power consumption

Ptot

1.8

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

VESD

Thermal resistance junction - solder point

RthJS

K / W

Note:

For the forward current and power consumption please see "maximum permissible forward current"

diagram

Parameter

Symbol

Values

Unit

Peak wavelength

F = 1 A, tp = 10 ms)

(typ)

peak

820

Centroid wavelength

(IF = 1 A, tp = 10 ms)

(typ)

centroid

810

Spectral bandwidth at 50% of Imax

(IF = 1 A, tp = 10 ms)

(typ)

∆λ

Half angle

(typ)

± 10

Dimensions of active chip area

(typ)

L x W

0.75 x 0.75

mm x

Rise and fall times of I

e ( 10% and 90% of Ie max)

F = 1 A, RL = 50 Ω)

(typ)

r / tf

8/ 14

Forward voltage

(IF = 0.5 A, tp = 100 µs)

(typ (max)) V

3.3 (≤ 3.6)

Forward voltage

(IF = 1 A, tp = 100 μs)

(typ (max)) VF

3.6

Total radiant flux

F = 1 A, tp = 100 µs)

(typ)

Φe

680

Total radiant flux

F = 1 A, tp= 10 ms)

(typ)

600

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