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FIR4N65F датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали FIR4N65F
подробное описание детали  isc N-Channel Mosfet Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FIR4N65F датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel Mosfet Transistor
FIR4N65F
·
FEATURES
·
Drain Current –ID= 4A@ TC=25℃
·
Drain Source Voltage-
: VDSS= 650V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 3.0Ω(Max)
·
Avalanche Energy Specified
·
Fast Switching
·
Simple Drive Requirements
·
DESCRITION
·
Designed for high efficiency switch mode power supply.
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±
30
V
ID
Drain Current-Continuous
4
A
IDM
Drain Current-Single Plused
16
A
PD
Total Dissipation @TC=25℃
106
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.18
℃
/W
Rth j-a
Thermal Resistance, Junction to Ambient
62.5
℃
/W


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