Parameter

Max.

Units

Drain- Source Voltage

30

V

7.3

5.8

A

Pulsed Drain Current



58

Power Dissipation

2.5

Power Dissipation

1.6

Linear Derating Factor

0.02

W/°C

Gate-to-Source Voltage

± 20

V

Gate-to-Source Voltage Single Pulse tp<10µs

30

V

Single Pulse Avalanche Energy

‚

70

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Junction and Storage Temperature Range

-55 to + 150

°C

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device

for use in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

IRF7201

Description

Top View

8

1

2

3

4

5

6

7

D

D

D

D

G

S

A

S

S

A

08/15/03

Parameter

Typ.

Max.

Units

Maximum Junction-to-Ambient

…

–––

50

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

www.irf.com

1

SO-8

PD- 91100D