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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DS2720 датащи(PDF) 21 Page - Dallas Semiconductor |
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DS2720 датащи(HTML) 21 Page - Dallas Semiconductor |
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21 / 21 page  DS2720 21 of 21 EEPROM RELIABILITY SPECIFICATION: (-20 °C to +70°C, 2.5V £ VDD £ 5.5V) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Copy to EEPROM Time tEEC 15 ms EEPROM Copy Endurance NEEC 25,000 cycles EEPROM Data Retention tEEDR 4 years NOTES 1. All voltages are referenced to VSS. 2. Specified with no resistive load on CC, DC, or CP. 3. Contact the factory for different voltage trip points and delay periods. 4. Typical load capacitance on CC, DC is 1000pF CP (charge pump reservoir cap) = 0.1 mF. DC load total on CC, DC, CP > 10M W. 5. RTST = |VPLS - VDD| / I measured, with VPLS = 3.2V, VDD = 3.6V when test current, ITST, active for RTST1 ; and VPLS = 4.0V, VDD = 2.5V when recovery charging for RTST2. 6. Maximum high-to-low fall time is 5 ms. 7. Internal 10V clamp on DC pin limits DC output logic low when PLS > 10V 8. Short-circuit delay tested with VDD ramped from 3.1V to 1.9V in 5 ms. Delay measured from VDD = 2.5V to DC pin fall to 7V from VOHCP. |
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