TPC6501 datasheet(1/5 Pages) TOSHIBA

номер детали	TPC6501

подробное описание детали	Silicon NPN Epitaxial Type

PDF	5 Pages

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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TPC6501

2001-12-18

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

TPC6501

High-Speed Switching Applications

DC-DC Converter Applications

Strobe Applications

•

High DC current gain: hFE = 400 to 1000 (IC = 0.2 A)

•

Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)

•

High-speed switching: tf = 25 ns (typ.)

Maximum Ratings (Ta

==== 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

20

V

Collector-emitter voltage

VCEO

10

V

Emitter-base voltage

VEBO

7

V

DC

IC

2.0

Collector current

Pulse

ICP

3.5

A

Base current

IB

200

mA

DC

0.8

Collector power

dissipation

t

= 10 s

PC

(Note)

1.6

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:

645 mm

2)

Electrical Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 20 V, IE = 0



100

nA

Emitter cut-off current

IEBO

VEB = 7 V, IC = 0



100

nA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

10



V

hFE (1)

VCE = 2 V, IC = 0.2 A

400



1000

DC current gain

hFE (2)

VCE = 2 V, IC = 0.6 A

200



Collector-emitter saturation voltage

VCE (sat)

IC = 0.6 A, IB = 12 mA



0.12

V

Base-emitter saturation voltage

VBE (sat)

IC = 0.6 A, IB = 12 mA



1.10

V

Rise time

tr



60



Storage time

tstg



215



Switching time

Fall time

tf

See Figure 1 circuit diagram.

VCC ∼− 6 V, RL = 10 Ω

IB1 = −IB2 = 12 mA



25



ns

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3T1A

Weight: 0.011 g (typ.)

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