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LM4701 датащи(PDF) 14 Page - National Semiconductor (TI) |
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LM4701 датащи(HTML) 14 Page - National Semiconductor (TI) |
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14 / 15 page ![]() Application Information (Continued) point is 0.17 dB down from passband response which is bet- ter than the required ±0.25 dB specified. This fact results in a low and high frequency pole of 4 Hz and 100 kHz respec- tively. As stated in the External Components section, R I in conjunction with C I create a high-pass filter. C I ≥ 1/(2π * 1kΩ * 4 Hz) = 39.8 µF; use 39 µF. The high frequency pole is determined by the product of the desired high frequency pole, f H, and the gain, AV. With a AV = 21 and f H = 100 kHz, the resulting GBWP of 2.1 MHz is less than the minimum GBWP of 5 MHz for the LM4701. This will ensure that the high frequency response of the amplifier will be no worse than 0.17 dB down at 20 kHz which is well within the bandwidth requirements of the design. www.national.com 14 |
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