MJD122 datasheet(4/8 Pages) ONSEMI

номер детали	MJD122

подробное описание детали	Complementary Darlington Power Transistor

PDF	8 Pages

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производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)

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IC, COLLECTOR CURRENT (AMP)

500

0.2

5000

2000

10,000

0.1

0.7

3000

0.5

20,000

1000

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.3

0.5

IC, COLLECTOR CURRENT (AMP)

1.5

2.5

0.5

0.2

0.1

0.7

0.3

20 30

200

300

0.3

0.7

0.5

PNP MJD127

NPN MJD122

IC, COLLECTOR CURRENT (AMP)

500

0.2

5000

2000

10,000

VCE = 4 V

TJ = 150°C

7000

0.1

0.7

°C

-55

°C

3000

0.5

20,000

700

1000

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.3

0.5

4 A

IC = 2 A

TJ = 25°C

IC, COLLECTOR CURRENT (AMP)

1.5

2.5

0.5

TJ = 25°C

VBE(sat) @ IC/IB = 250

VBE @ VCE = 4 V

VCE(sat) @ IC/IB = 250

0.2

0.1

0.7

0.3

Figure 2. DC Current Gain

Figure 3. Collector Saturation Region

Figure 4. “On” Voltages

200

300

0.3

0.7

0.5

6 A

VCE = 4 V

TJ = 150°C

°C

-55

°C

TJ = 25°C

4 A

IC = 2 A

6 A

TJ = 25°C

VBE @ VCE = 4 V

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

TYPICAL ELECTRICAL CHARACTERISTICS

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