2SD544 datasheet(1/2 Pages) ISC

номер детали	2SD544

подробное описание детали	isc Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

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isc Silicon NPN Power Transistor

2SD544

DESCRIPTION

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 90V(Min)

·

Low Collector-Emitter Saturation Voltage-

: VCE(sat) = 2.0V(Max.) @ IC= 4.0A

·

With TO-220C Package

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for audio frequency power amplifier and

general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

90

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current-Peak

8

A

IB

Base Current-Continuous

2

A

PC

Collector Power Dissipation

@ TC=25℃

43

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

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