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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LM4250CMX датащи(PDF) 4 Page - National Semiconductor (TI) |
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LM4250CMX датащи(HTML) 4 Page - National Semiconductor (TI) |
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4 / 12 page  Electrical Characteristics (Continued) V S = ±15V Parameter Conditions I SET = 1 µA I SET =10 µA Min Max Min Max Large Signal Voltage V O = ±10V, RL = 100 kΩ 50k Gain R L =10 kΩ 50k Output Voltage Swing R L = 100 kΩ ±12V R L =10 kΩ ±12V Common Mode Rejection Ratio R S ≤ 10 kΩ 70 dB 70 dB Supply Voltage Rejection Ratio R S ≤ 10 kΩ 76 dB 76 dB Supply Current 11 µA 100 µA Power Consumption 330 µW 3 mW Electrical Characteristics LM4250C (0˚C ≤ T A ≤ +70˚C unless otherwise specified.) TA =TJ V S = ±1.5V Parameter Conditions I SET = 1 µA I SET =10 µA Min Max Min Max V OS R S ≤ 100 kΩ,TA = 25˚C 5 mV 6 mV I OS T A = 25˚C 6 nA 20 nA I bias T A = 25˚C 10 nA 75 nA Large Signal Voltage Gain R L = 100 kΩ,TA = 25˚C 25k V O = ±0.6V, RL =10 kΩ 25k Supply Current T A = 25˚C 8 µA 90 µA Power Consumption T A = 25˚C 24 µW 270 µW V OS R S ≤ 10 kΩ 6.5 mV 7.5 mV I OS 8nA 25nA I bias 10 nA 80 nA Input Voltage Range ±0.6V ±0.6V Large Signal Voltage V O = ±0.5V, RL = 100 kΩ 25k Gain R L =10 kΩ 25k Output Voltage Swing R L = 100 kΩ ±0.6V R L =10 kΩ ±0.6V Common Mode Rejection Ratio R S ≤ 10 kΩ 70 dB 70 dB Supply Voltage Rejection Ratio R S ≤ 10 kΩ 74 dB 74 dB Supply Current 8µA 90µA Power Consumption 24 µW 270 µW V S = ±15V Parameter Conditions I SET = 1 µA I SET =10 µA Min Max Min Max V OS R S ≤ 100 kΩ,TA = 25˚C 5 mV 6 mV I OS T A = 25˚C 6 nA 20 nA I bias T A = 25˚C 10 nA 75 nA Large Signal Voltage R L = 100 kΩ,TA = 25˚C 60k Gain V O = ±10V, RL =10 kΩ 60k Supply Current T A = 25˚C 11 µA 100 µA Power Consumption T A = 25˚C 330 µW 3 mW V OS R S ≤ 100 kΩ 6.5 mV 7.5 mV I OS 8nA 25nA I bias 10 nA 80 nA www.national.com 4 |
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