RTQ035P02FHA datasheet(3/8 Pages) ROHM

3 / 8 page

RTQ035P02

Transistor

Rev.A

3/4

Electrical characteristic curves

Fig.1 Typical Transfer Characteristics

0.5

1.0

0.001

0.1

0.01

1.5

Gate−Source Voltage : −VGS[V]

2.0

2.5

3.0

3.5

4.0

Ta=125°C

75°C

25°C

−25°C

VDS=−10V

pulsed

Fig.2 Static Drain−Source On−State

Resistance

0.1

100

1000

Drain Current : −ID[A]

−4.0V

−4.5V

VGS=−2.5V

vs.Drain Current

Ta=25°C

pulsed

Fig.3 Static Drain−Source On−State

Resistance

0.1

100

1000

Drain Current : −ID[A]

vs.Drain Current

Ta=125°C

75°C

25°C

−25°C

VGS=−4.5V

pulsed

Fig.4 Static Drain−Source On−State

Resistance

0.1

100

1000

Drain Current : -ID[A]

Ta=125°C

75°C

25°C

−25°C

vs.Drain−Current

VGS=−4V

pulsed

Fig.5 Static Drain−Source On−State

Resistance

0.1

100

1000

Drain Current : −ID[A]

Ta=125°C

75°C

25°C

−25°C

vs.Drain−Current

VGS=−2.5V

pulsed

0.5

1.0

1.5

Source−Drain Voltage : −VSD[V]

Fig.6 Reverse Drain Current vs.

0.01

0.1

2.0

Ta=125°C

75°C

25°C

−25°C

Source-Drain Voltage

VGS=0V

pulsed

0.01

0.1

100

Drain−Source Voltage : −VDS[V]

Fig.7 Typical Capactitance

100

10000

1000

vs.Drain−Source Voltage

Ciss

Coss

Crss

Ta=25 C

f=1MHz

VGS=0V

0.01

0.1

Drain Current : −ID[A]

Fig.8 Switching Characteristics

1000

100

td(off)

td(on)

Ta=25 C

VDD=−15V

VGS=−4.5V

RG=10Ω

pulsed

Fig.9 Dynamic Input Characteristics

Total Gate Charge : Qg[nC]

Ta=25 C

VDD=−15V

ID=−3.5V

RG=10Ω

pulsed

RTQ035P02FHA

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