MJD243 datasheet(2/8 Pages) ONSEMI

2 / 8 page

MJD243 (NPN), MJD253 (PNP)

www.onsemi.com

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance

Junction−to−Case

Junction−to−Ambient (Note 2)

RqJC

RqJA

89.3

°C/W

2. When surface mounted on minimum pad sizes recommended.

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 10 mAdc, IB = 0)

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

(VCB = 100 Vdc, IE = 0, TJ = 125°C)

ICBO

−

100

nAdc

mAdc

Emitter Cutoff Current

(VBE = 7.0 Vdc, IC = 0)

IEBO

−

100

nAdc

DC Current Gain (Note 3)

(IC = 200 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

hFE

180

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 1.0 Adc, IB = 100 mAdc)

VCE(sat)

−

0.3

0.6

Vdc

Base−Emitter Saturation Voltage (Note 3)

(IC = 2.0 Adc, IB = 200 mAdc)

VBE(sat)

−

1.8

Vdc

Base−Emitter On Voltage (Note 3)

(IC = 500 mAdc, VCE = 1.0 Vdc)

VBE(on)

−

1.5

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 4)

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

Cob

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width = 300

ms, Duty Cycle [ 2%.

4. fT = ⎪hFE⎪• ftest.

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