2SD1466 datasheet(1/2 Pages) ISC

номер детали	2SD1466

подробное описание детали	isc Silicon NPN Darlington Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

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isc Silicon NPN Darlington Power Transistor

2SD1466

DESCRIPTION

·

High Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 450V(Min)

·

Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.5V(Max) @IC= 8A

·

High DC Current Gain

: hFE= 200(Min) @ IC= 15A, VCE= 3V

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Power amplification applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

500

V

VCEO

Collector-Emitter Voltage

450

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

15

A

ICM

Collector Current-Peak

30

A

PC

Collector Power Dissipation

@ TC=25℃

100

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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