2SD213 datasheet(1/2 Pages) ISC

номер детали	2SD213

подробное описание детали	isc Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

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isc Silicon NPN Power Transistor

2SD213

DESCRIPTION

·

Excellent Safe Operating Area

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 80V(Min.)

·

Low Collector Saturation Voltage-

·

High Switching Speed

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for high power amplifier and switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

MAX

UNIT

VCBO

Collector-Base Voltage

110

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

10

A

ICP

Collector Current-Peak

20

A

PC

Collector Power Dissipation

@TC=25℃

100

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

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