TPCP8BA1 datasheet(2/4 Pages) TOSHIBA

2 / 4 page

TPCP8BA1

MOSFET

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±12 V, VDS = 0



±1

µA

V (BR) DSS

ID = −1 mA, VGS = 0

−20



Drain-Source breakdown voltage

V (BR) DSX

ID = −1 mA, VGS = +12 V

−8



Drain Cut-off current

IDSS

VDS = −20 V, VGS = 0



−1

µA

Gate threshold voltage

Vth

VDS = −3 V, ID = −0.1 mA

−0.5



−1.1

Forward transfer admittance

|Yfs|

VDS = −3 V, ID = −0.65 A

(注 4)

1.3

2.7



ID = −0.65 A, VGS = −4 V

(注 4)



140

180

ID = −0.65 A, VGS = −2.5 V

(注 4)



200

260

Drain-Source ON resistance

RDS (ON)

ID = −0.65 A, VGS = −2.0 V

(注 4)



260

460

Ω

Input capacitance

Ciss

VDS = −10 V, VGS = 0, f = 1 MHz



370



Reverse transfer capacitance

Crss

VDS = −10 V, VGS = 0, f = 1 MHz



Output capacitance

Coss

VDS = −10 V, VGS = 0, f = 1 MHz



116



Turn-on time

ton



Switching time

Turn -off

time

toff

VDD = −10 V, ID = −0.65 A

VGS = 0~−2.5 V, RG = 4.7 Ω



Note 4:

Pulse measurement

Switching Time Test Circuit

(b) VIN

(a) Test circuit

VDS (ON)

VDD

toff

10%

90%

0 V

2.5 V

10%

90%

ton

µs

2.5 V

OUT

VDD

VDD = 10 V

RG = 4.7 Ω

Duty

IN: tr, tf < 5 ns

Common Source

= 25°C

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 µA

for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off)

requires lower voltage than Vth.

(Relationship can be established as follows: VGS (off) < Vth < VGS (on))

Please take this into consideration for using the device.

VGS recommended voltage of -2.5 V or higher to turn on this product.

2003-12-19

TPCP8BA1 датащи(PDF) 2 Page - Toshiba Semiconductor

TPCP8BA1 датащи(HTML) 2 Page - Toshiba Semiconductor

Html Pages

1 2 3 4

датащи скачать

ссылки URL